IGBT Module-Size:LG 106.4 X WD 61.4 X HT 29 MM

Product Specification 

* SIZE: LG 106.4 X WD 61.4 X HT 29 MM

* VCES(COLLECTOR-EMITTER VOLTAGE): 1200 V

* IC(CONTINUOUS DC COL LECTOR CURRENT): 450 A AT 100 DEG C AND 520A AT 25 DEG C

* ICRM(REPETITIVE PEAK COLLECTOR CURRENT): 900 A

* PTOT: 2400 W, EMITTER CONTROLLED DIODE

* CASE SIZE: 62 MM MA NUFACTURER : INFINEON/SEMIKRON OR ANY OTHER REPUTED MAKE MODEL : FF450R12KE4 OR EQUIVALENT MODEL

Application 

Consumer electronics, industrial technologies, the energy industry, aerospace electronics, and transportation all make extensive use of IGBTs. The IGBT combines the straightforward gate-drive properties of power MOSFETs with the capacity of bipolar transistors to operate at high currents and low saturation voltages.